News Article
Straining to achieve best in class
IQE Silicon Compounds has released a proprietary product with strained silicon at 20% Ge content. The company claims “best in class” for its material in terms of surface micro roughness (less than 1Angstrom on a 1micron2 field), low threading and low pile up dislocation densities, and germanium and thickness uniformity. Several wafer manufacturers and IDMs have made independent assessments, IQE reports.
IQE Silicon Compounds has released a proprietary product with strained silicon at 20% Ge content. The company claims “best in class” for its material in terms of surface micro roughness (less than 1Angstrom on a 1micron2 field), low threading and low pile up dislocation densities, and germanium and thickness uniformity. Several wafer manufacturers and IDMs have made independent assessments, IQE reports.
The company further claims virtually 100% strain relaxation for its previous10%, 17% and 19% Ge along with the new 20% Ge content wafers. Full lattice relaxation is critical in ensuring maximum levels of strain in the surface silicon film, hence maximising mobility enhancement and, additionally, thermal stability during subsequent wafer processing.
IQE’s strained silicon wafers are immediately available in both production and R&D quantities.
