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News Article

Philips gets 90nm

Philips Electronics reports achieving right-first-time 90nm silicon from its CMOS production line at Crolles2, France, and from TSMC facilities in Taiwan. Philips used the low-leakage 90nm process to produce a component that integrates an ARM processor core with SRAM, ROM and analogue signal circuitry designed for a wireless application. Philips aims to deliver production volumes of 90nm CMOS products this year.
Philips Electronics reports achieving right-first-time 90nm silicon from its CMOS production line at Crolles2, France, and from TSMC facilities in Taiwan. Philips used the low-leakage 90nm process to produce a component that integrates an ARM processor core with SRAM, ROM and analogue signal circuitry designed for a wireless application. Philips aims to deliver production volumes of 90nm CMOS products this year.

The process was specially developed by Philips and its Crolles2 Alliance partners - Motorola and STMicroelectronics. It gives the option of thicker gate oxide to control leakage currents.

In terms of active power consumption, the CMOS090LP process achieves typical power savings of 75% compared to a 0.18micron CMOS implementation. In terms of the silicon area occupied by digital circuitry, it offers up to four times reduction.

“In addition to achieving right-first-time silicon, one of the most satisfying results is that we are seeing consistent performance between devices produced in the Crolles2 fab and those that have come from the TSMC fab,” comments Jan-Marc Luchies, 90nm CMOS program manager at Philips Semiconductors.

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