Smart power on SOI
The XD10H technology is aimed at power net applications up to 230V. The modular process combine double diffused metal oxide semiconductor (DMOS), bipolar and 1micron complementary metal oxide semiconductor (CMOS) processing steps with dielectric insulation. This approach enables the integration of a wide variety of MOS and bipolar devices with different voltage levels.
In addition to predefined 650V and 350V n-channel DMOS transistors with different on-resistances, CMOS transistors are available with voltage levels from 5-20V. Complex CMOS logic also can be integrated, based on 1micron design rules.
The core process module has a 650V breakdown voltage for the HV DMOS section providing trench insulation, single-level poly with gate oxide and a third power metal layer. Resulting chip sizes for devices requiring 650V insulation will be significantly smaller using XD10H with the trench (dielectric) insulated devices compared to technology using junction insulation for high-voltage devices.
Main target applications for this technology include analogue switch ICs, driver ICs for capacitive, inductive and resistive loads, and electroluminescent (EL)/piezo driver ICs for applications using a 230V net supply.
X-FAB also offers comprehensive design support including a design kit with libraries, models and documentation.
