News Article
Golden LDMOS
Infineon has made a 10% improvement (typical) in linear efficiency on its new GOLDMOS high-power RF transistors process, compared with the previous generation. The IC producer continues to use gold metallisation, it says, because of proven superior reliability at high temperatures. Other improvements come in the form of ultra-wide-bandwidth, reduced memory effect and the industryÕs best thermal performance. Power density has increased by 30%.
Infineon has made a 10% improvement (typical) in linear efficiency on its new GOLDMOS high-power RF transistors process, compared with the previous generation. The IC producer continues to use gold metallisation, it says, because of proven superior reliability at high temperatures. Other improvements come in the form of ultra-wide-bandwidth, reduced memory effect and the industryÕs best thermal performance. Power density has increased by 30%.
One of the first products incorporating the new technology is the single-ended, 100W PTFA211001E 2.1GHz device. In the two-carrier WCDMA 3GPP mode, this device has an average output of 22W and 16.5dB gain with 30% efficiency. It has an ultra-wide-bandwidth of several hundred MHz, third-order intermodulation distortion (IM3) performance of -37dBc and a thermal resistance of only 0.38degreesC/W.
GOLDMOS transistors are aimed at use in UMTS/WCDMA, GSM, CDMA, EDGE, TDSCDMA, PCS/DCS, MMDS, TV broadcast and DAB amplifiers.
Initial GOLDMOS product samples will be available in Q3 2004, with full production beginning in Q4 2004.
