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Infineon/NanYa partnership inaugurates 300mm plant

Inotera Memories in Taiwan officially inaugurated its 300mm semiconductor production facility. The joint venture between Infineon Technologies and Nanya Technology will make memory ICs at what is claimed as the world's largest and most competitive 300mm DRAM production site with a total capacity of more than 50,000 wafer starts per month when fully operational. The first DRAM chips using 110nm trench technology are already rolling off the production line.
Inotera Memories in Taiwan officially inaugurated its 300mm semiconductor production facility. The joint venture between Infineon Technologies and Nanya Technology will make memory ICs at what is claimed as the world's largest and most competitive 300mm DRAM production site with a total capacity of more than 50,000 wafer starts per month when fully operational. The first DRAM chips using 110nm trench technology are already rolling off the production line.

We are very proud of having finished construction and started the ramp up within a record time of only 18 months," says Charles Kau, president of Inotera Memories. The strategic cooperation on standard memory chips between Infineon and Nanya started in November 2002. Both companies are currently jointly developing future 90nm and 70nm trench technologies.

The 300mm semiconductor facility will be equipped in two stages. The first stage has been completed according to schedule and the ramp up of DRAM already started in April 2004. By the end of 2004, more than 20,000 wafer starts per month are planned. The transition to 90nm is expected to start in 2005. Completion of the second stage enabling 50,000 wafer starts per month is anticipated by the end of 2005.

The total investment of the joint venture amounts to $2.2bn. Currently the company has 1100 employees. With the completion of the second stage the headcount is expected to increase by 500 to 1600 employees.

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