News Article
Winbond gains Infineon 90nm technology
Infineon Technologies is to transfer its 0.09micron DRAM trench technology and 300mm production expertise to Winbond Electronics in Taiwan, expanding on existing DRAM co-operation between the companies.
Infineon Technologies is to transfer its 0.09micron DRAM trench technology and 300mm production expertise to Winbond Electronics in Taiwan, expanding on existing DRAM co-operation between the companies.
For computing applications, Winbond will use the technology exclusively for Infineon. Other special application memory developed by Winbond based on the technology will result in license fees and royalties for Infineon. The companies also intend to jointly develop memories targeted for mobile applications.
The companiesÕ previous May 2002 agreement allowed Winbond to manufacture DRAMs for computing applications at its 200mm plant in Hsinchu using Infineon's 0.11micron DRAM trench technology exclusively for Infineon.
First products from the new 300mm plant, which will be built in Taichung, Taiwan, are expected at the end of 2005.
