No surprises have emerged to prevent the introduction of 193i for 65nm half-pitch in 2007, according to International SEMATECHÕs international symposium on immersion and 157nm lithography. The outlook is also positive for its extension to 45nm half-pitch and possibly below. Potential solutions for achieving the latter include hyper-numerical aperture, improved lens design, high refractive-index fluids, high-index resists and lens material, double exposure, and related infrastructure.
No surprises have emerged to prevent the introduction of 193i for 65nm half-pitch in 2007, according to International SEMATECHÕs international symposium on immersion and 157nm lithography. The outlook is also positive for its extension to 45nm half-pitch and possibly below. Potential solutions for achieving the latter include hyper-numerical aperture, improved lens design, high refractive-index fluids, high-index resists and lens material, double exposure, and related infrastructure.
Equipment suppliers ASML, Nikon and Canon forecast first-generation production tools in 2005, and second-generation exposure equipment in 2006. Also, manufacturers' experiments on prototype tools confirmed key aspects of lithographic performance, including process window and critical-dimension (CD) uniformity.
Development of 157nm lithography continues, but at a reduced level. JapanÕs Selete consortium is installing a 157nm scanner to lead infrastructure development. In addition, there are global efforts toward 157nm immersion, although eventual insertion of that technology remains an open question. "Excellent progress" has been demonstrated on a Czochralski process (CZ) growth method for the calcium fluoride lenses used in 157nm scanners.
