Suppressing boron diffusion
"Boron diffusion has traditionally been a major problem in both silicon and silicon-germanium devices, having a significant impact on the scalability of MOS and bipolar technologies," comments Innos director Peter Ashburn.
In SiGe heterojunction bipolar transistors, boron diffusion limits the achievable basewidth and therefore degrades the high frequency performance of the transistor. In the halo region of a metal-oxide semiconductor field-effect transistor (MOSFET), it degrades the abruptness of the source/drain extension profiles and hence worsens short channel effects. The problem is exacerbated by transient enhanced diffusion, in which increased diffusion is experienced when dopant implants are annealed.
Innos has expertise in silicon, microsystems (MEMS) and other nanotechnologies.
