SIGMA-C incorporates Fraunhofer simulation
The new algorithm combines Real Exposure over Non-topography and Flood Exposure over Topography (RENFT) simulations based on a decomposition of the full simulation developed by Dr Andreas Erdmann and his lithography simulation group at the IISB in Erlangen, Germany.
The integration of the new algorithm into the SOLID-C software package enables the efficient simulation of many critical wafer topography scenarios, such as resist footing effects in the vicinity of poly-Si lines on patterned wafers.
The SOLID-C suite of topographical (or 3D) photomask simulation has more than three years of production acceptance at integrated device manufacturers (IDMs) worldwide. Simulation speed for the new products has been increased more than 10x over other wafer topography scenarios. Memory requirements are also substantially reduced.
