Ruhr University kits up for high-k R&D
The AIX 200FE system will be installed in the clean room facilities of the Institute for Inorganic Chemistry II under the direction of Professor Dr Roland A Fischer and Jr Prof Dr Anjana Devi. The activities of the group are directed at the development of new metal-organic precursors and their properties in different chemical vapour deposition methods.
The Ruhr-University and AIXTRON signed a research and demonstration laboratory agreement wherein both parties will co-operate on the development of metal-organic precursors for high-k and electrode materials and the use of these precursors for an AVD thin film deposition process.
High-k materials are expected to replace silicon dioxide as an isolating gate dielectric, and enable higher transistor performance at drastically reduced leakage currents. At the same time, metal electrode materials are expected to replace poly-silicon as the transistor gate material.
