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News Article

Optical CD metrology to 65nm and beyond

KLA-Tencor and IMEC have entered into a joint-development project (JDP) to accelerate the adoption of optical critical dimension (CD) metrology technology for next-generation (65nm and below) semiconductor applications.
KLA-Tencor and IMEC have entered into a joint-development project (JDP) to accelerate the adoption of optical critical dimension (CD) metrology technology for next-generation (65nm and below) semiconductor applications.

The JDP will focus on two key areas:

* Extending the use of optical CD metrology in current applications, such as shallow trench isolation (STI) and gate, to the sub-65nm node.

* Expanding the proliferation of optical CD metrology into new applications, such as 3-D contact and via layers.

KLA-Tencor's SpectraCD 100 system will be the optical CD metrology tool used for these development efforts. The equipment uses KLA-Tencor's sixth-generation broadband spectroscopic ellipsometry technology with reflective optics. It has 3-D modelling capability for contact-hole metrology, which is especially crucial for production monitoring.

Contact-hole sizes that are significantly reduced or closed at the bottom of front-end-of-line (FEOL) structures can result in significant yield loss. The 3-D modelling also provides more accurate information on sidewall angle and height, which enables tighter process control and better prediction of electrical performance.

The partners believe that chipmakers need more than linewidth measurements to maintain yields and that complete feature profile information is now required, including critical dimension CD, sidewall angle, height and depth data.

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