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ASM goes back to front to seal pores for ultra-low-k

ASM International is claiming a breakthrough pore-sealing process for next generation integration of porous low-k insulator materials in copper interconnect on semiconductor chips.
ASM International is claiming a breakthrough pore-sealing process for next generation integration of porous low-k insulator materials in copper interconnect on semiconductor chips.

The plasma benzocyclobutene (BCB) polymerisation technology has been developed jointly with a major semiconductor device manufacturer to seal pores in frothy low-k materials. Open pores allow metal to get into the low-k material, reducing the effectiveness of the insulation and its dielectric properties.

Dow Chemical markets BCB as "Cyclotene" for "back-end" IC packaging applications. The new front-end process is available on ASM's Eagle plasma-enhanced chemical vapour deposition (PECVD) system.

The ASM technique has already been proven as a "pore sealing process" and is targeted for implementation at 65nm. ASM claims that the process will work on most industry-developed low-k PECVD dielectrics and inorganic spin-on dielectrics in addition to the company's own Aurora ultra low-k (ULK) material.

"Due to the particular properties of the BCB molecule, the dielectric constant of the ULK material remains low", comments Ivo Raaijmakers, chief technology officer and director of R&D of ASM's front-end operations.

Tominori Yoshida, business unit manager of ASM's PECVD product lines reports: "Customer demonstrations on 300mm wafers will be available from this quarter, and we are expecting five shipments in 2005 to major semiconductor device manufactures."

NEC reported front-end use of polymerised BCB to reduce k in copper metallisation structures earlier this year (Bulletin 538, June 23, 2004). Karl Suss, Dow Chemical and Fraunhofer IZM developed wafer level bumping and passivation IC packaging applications up to 2001 (Bulletin 386, June 13, 2001).

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