News Article
First integration of PIN photodetection with CMOS/BiCMOS
X-FAB Semiconductor Foundries has a new, patented positive intrinsic negative (PIN) diode module for its 0.6micron BiCMOS technology (XB06). The company says that this is the first time that it has been possible to integrate PIN diodes with CMOS and BiCMOS transistors on a single chip. The parameters of standard XB06 transistors are not influenced by the PIN diode integration.
X-FAB Semiconductor Foundries has a new, patented positive intrinsic negative (PIN) diode module for its 0.6micron BiCMOS technology (XB06). The company says that this is the first time that it has been possible to integrate PIN diodes with CMOS and BiCMOS transistors on a single chip. The parameters of standard XB06 transistors are not influenced by the PIN diode integration.
The significant advantage of PIN diodes over conventional PN diodes is a reduction in barrier capacitance of around 80%. As a result, a speed increase of more than 85% in signal rise and fall times can be achieved.
In addition, light is converted into electrical signals more rapidly, which makes PIN diodes ideally suited for high-speed data communications, e.g. for DVD pickup systems. The diodes' spectral sensitivity enables their implementation in DVD systems with either red or blue lasers. Furthermore, it is possible to use an antireflective coating (ARC) that further optimises the diodes' spectral characteristics.
