+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
*/
News Article

STMicro device combines MOSFET/bipolar benefits

STMicroelectronics has introduced a hybrid emitter-switched bipolar transistor (ESBT), designed for use in welding equipment, induction heating systems and power factor correction for audio amplifiers.

The device is of interest in that it has been designed to combine the strengths and eliminate the drawbacks of both bipolar and MOSFET technologies.

Power bipolar technology is routinely used in power switching applications at frequencies well below 70kHz. Its low collector-emitter saturation voltage brings the benefit of low conduction losses. Its drawbacks include slow switching speeds, the need for high currents from driving circuitry and problems related to fine-tuning this circuitry.

MOSFET technology meanwhile is widely used in high-frequency power switching applications. The main benefits of the MOSFETs are their high switching speed and low current demand. Disadvantages of the technology include a higher cost compared to bipolar technology and high power consumption during conduction.

By combining the two technologies, STMicro claims the device reduces conduction losses to the same level as bipolars while offering good performance in high-speed switching at up to 150kHz.
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Silicon Semiconductor Magazine, the Silicon Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: