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Samsung first to make DDR3 DRAM memory

South Korean electronics group Samsung claims that it has produced the world's first DRAM device based on the new DDR3 technology.
South Korean electronics group Samsung claims that it has produced the world's first DRAM device based on the new DDR3 technology. DDR3 is set to become the standard for next generation memory. It consumes less energy than current technologies and is significantly faster.

The new 512Mb DRAM DDR3 – to be made available in 2006 - can process data at the lightning-fast rate of 1,066Mbps, double the speed of DDR2 and four times that of DDR.

The prototype that Samsung has developed is also the first memory chip to operate on a voltage of just 1.5. This will make the memory less of a drain on the batteries of portable devices.

Samsung was also the first to produce DDR DRAM and DDR2 DRAM in 1998 and 2001 respectively.

"Our success with DDR3 continues our relentless push to bring the most advanced memory devices to the market at the fastest possible pace," said Tom Quinn, senior vice president of memory sales and marketing at Samsung Semiconductor.

The new DDR3 DRAM will be manufactured using 80nm-production technology. It will include new functionality – such as self-driver calibration and data synchronisation - to achieve unprecedented processing speeds.

According to a recent forecast by market research firm IDC, DDR3 DRAM is expected to account for 65% of the entire DRAM market by 2009.
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