News Article
ST packs eight dies into a single BGA package
Number two European chip maker STMicroelectronics has developed the technology to include as many as eight stacked memory chips in a singe 1.6mm high BGA package.
Number two European chip maker STMicroelectronics has developed the technology to include as many as eight stacked memory chips in a singe 1.6mm high BGA package.
The company has also used the technique to pack two memory dies into a 0.8mm thick UFBGA (Ultra thin Fine Pitch BGA).
The new technology - which the company says will meet the demand for ever-smaller memory volumes for phones, cameras and PDAs - also allows different types of memory such as NOR Flash and SRAM to be provided within the same package, even if they are produced using different process technologies.
Until now, the number of chips in a multi-chip package has been limited by the thickness of the individual die. ST's new technology makes use of very thin die which - at just 40 microns thick - are a quarter of the thickness of conventional dies. The dies are supported and spaced apart from each other by interposers, also just 40 microns thick.
The eight-die package developed by ST consists of a stack of eight active memory chips and seven interposers, while a single interposer separates the chips of the two-die UFBGA device.
The two new devices also benefit from a new technique to reduce the wire bond loop height to around 40 microns.
The company has also used the technique to pack two memory dies into a 0.8mm thick UFBGA (Ultra thin Fine Pitch BGA).
The new technology - which the company says will meet the demand for ever-smaller memory volumes for phones, cameras and PDAs - also allows different types of memory such as NOR Flash and SRAM to be provided within the same package, even if they are produced using different process technologies.
Until now, the number of chips in a multi-chip package has been limited by the thickness of the individual die. ST's new technology makes use of very thin die which - at just 40 microns thick - are a quarter of the thickness of conventional dies. The dies are supported and spaced apart from each other by interposers, also just 40 microns thick.
The eight-die package developed by ST consists of a stack of eight active memory chips and seven interposers, while a single interposer separates the chips of the two-die UFBGA device.
The two new devices also benefit from a new technique to reduce the wire bond loop height to around 40 microns.
