Power
OptiMOS-T was designed to provide a new option to automotive system engineers working to replace mechanical and hydraulic systems with electrical equipment. The new OptiMOS-T shows the same avalanche ruggedness as Infineon's planar OptiMOS technology. Further, the process allows on-chip integration of more than 10 times the density of logic circuitry compared to planar technology. OptiMOS-T was especially developed to minimise the on-resistance (Rdson) and reduce conduction losses in automotive applications.
The first product in the OptiMOS-T family, the IPB100N06S3L-03, is a 2.7mOhm 55V N-Channel MOSFET in a D2PAK package. A complete product family with Rdson ranging from 2.7mOhm to about 25mOhm will be released within the next months.
All products of the OptiMOS-T family are already lead-free (Pb-free plating, green mould compound), allowing automotive system providers to have lead-free products available according to current regulations such as Europe's RoHS (Restricting the use of Hazardous Substances) and WEEE (Waste Electronic and Electrical Equipment) directives. The devices are capable of sustaining up to 260degreesC reflow peak temperature.
Reliability testing using extended temperature qualification (beyond 1000 temperature cycles, as per Automotive Electronics Council AEC Q 101) showed no degradation of the die-attach quality and no increase of the thermal resistance. Engineering samples are available now and production quantities will be available from mid-2005 onward.
