Power
ST's new generation of automotive smart power technology is based on a thorough analysis of the physical mechanisms that can lead to device failure during abnormal operating conditions such as temporary or permanent short circuits and the fast thermal transients that can occur when a circuit is first switched on. The new control strategies reduce the effect of these stresses on the most vulnerable elements of the circuit through active power limitation.
Domenico Bille, VIPower & RF Division general manager, comments:
"Historically, reducing the physical dimensions of the power transistors has always made them more susceptible to the kind of stresses that are inevitably found in real automotive applications. Now, through the embedding of novel active protection circuits, our new devices are not only more compact and cost-effective but also much more resistant to the effects of the anomalous operating conditions encountered in automotive applications."
The VIPower technology is based on vertical current flow - the high current (typically driving lamps, motors and solenoids in the car) flows vertically between the top and bottom of the silicon chip through high-performance power-transistor configurations. Integrated control and diagnostic circuitry is formed horizontally on a top layer of the chip.
ST has designed a family of new high-side drivers based on the new technology. The new product family includes single, dual, and quad drivers with RDS(ON) values from 2-160mOhm. Samples will be available to automotive customers from Q4 2004.
