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Process development

Renesas Technology claims that its 4Gbit assist gate AND (AG-AND) type Flash memory is the world's fastest.

Renesas Technology claims that its 4Gbit assist gate AND (AG-AND) type Flash memory is the world's fastest. The device is the company's first product built on its 90nm process. The chip manages a programming speed of 10MBytes/second - fast enough to record a 2-hour movie in about two minutes using MPEG-4 coding.

Sudeep Sharma, vice president, geographic account business unit at Renesas Technology America, comments: "[Our 90nm] process, combined with an improved AG-AND Flash memory cell that uses assist gates to prevent inter-cell interference, results in the world's smallest die size among currently commercially developed 4Gbit Flash memory devices. Compared to our 1Gbit Flash memory device, the total chip area of the new 4Gbit Flash chips is nearly two-thirds smaller on a per-Gbit basis."

US mixed-signal foundry AMI Semiconductor is developing an EEPROM memory module for its 0.35micron (I3T) smart power process. The aim is to provide non-volatile memory (NVM) functionality for calibration or data gathering for applications such as automotive, medical and industrial. The memory module will complement existing Flash and one-time programmable (OTP) memory options that AMIS already offers.

The FREEPROM module will be developed in the native semiconductor process, eliminating the need for an extra layer. This will help to keep the costs steady for the module to which the technology is added. It is anticipated that the new memory module will meet the requirements of the AEC Q100 "grade 0" product qualification process for temperatures up to 150degreesC and endurance up to 100,000 write cycles. The first products embedding this capability are already in development and will be released to production by Q3 2005.

JMAR Technologies' research division has received $2mn in funding under its previously announced $34.5mn US Department of Defense (DARPA) contract for ongoing refinement of a laser produced plasma (LPP) x-ray lithography source. JMAR has been developing its LPP source under a multi-year contract with the DoD, along with additional applications including x-ray microscopy and x-ray nano probe instrumentation. Some $3.4mn of the $34.5mn DARPA contract will enable the company to improve the versatility and efficiency of its LPP source.

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