Process development
Currently, silicon carbide (SiC) and sapphire are the substrates of choice for most GaN-based products. SiC- and sapphire-based GaN products have reached commercialisation in markets such as light emitting diodes (LEDs) and laser diodes.
"Growing GaN on industry-standard silicon provides several unique advantages to GaN device developers," says Edwin Piner, Nitronex' director of Materials Engineering. "Using large-area, 100mm, silicon substrates provides the economic benefits of large wafer scaling, as well as cheaper wafer procurement costs in comparison to other substrates. These benefits, in addition to our patented process of growing high-quality GaN on silicon, are what will ultimately allow for widespread GaN-based device commercialisation."
Christopher Rauh, Nitronex's vice-president of Sales and Marketing, adds:
"We receive many inquiries from organisations interested in developing various GaN-based devices, and we realised it was time to exploit the technology we already had to help others build their next generation devices, just as we are doing with our commercial RF power transistors. This new offering is part of our overall strategy to be a promoter and enabler for the broad commercialisation of GaN devices into a variety of markets."
