News Article
Process development
STMicroelectronics has completed its 'Small Page' NAND Flash memory roadmap with the introduction of 256Mbit and 128Mbit devices built on an advanced 120nm technology.
STMicroelectronics has completed its 'Small Page' NAND Flash memory roadmap with the introduction of 256Mbit and 128Mbit devices built on an advanced 120nm technology. The chips are designed to provide cost-effective storage for a range of consumer products that require large amounts of low cost memory. Both of the new devices are available in 3V and 1.8V power supply versions. They join 512Mbit and 1Gbit chips that are already in volume production.
The new devices are intended to provide cost-effective mass memory for portable consumer equipment such as mobile phones, digital still cameras, PDAs, GPS navigation systems, disposable low-density Flash cards, consumable USB drives and removable storage for video games. A software toolchain available from ST allows fast development of products that use the new memory chips, and can help to extend their useful life. A block erase command is provided with a block erase time of 2ms. Each block is specified for 100,000 program and erase cycles, and 10-year data retention.
