Process development
Jan du Preez, Micron's vice-president of Networking and Communication, reports: "Micron is entering the NAND market aggressively, starting with the introduction of our first device on 90nm followed by process migrations to 72nm and then 58nm. Our NAND roadmap reflects multiple configurations and density migrations up to 16Gbits. We anticipate ramping production quickly to meet the forecasted market demand."
Micron anticipates bringing its first NAND Flash solution to market by the end of the year. The 2Gbit component is aimed at a Flash card market starting to transition from 128MByte to 256MByte density NAND cards as the volume leader. Micron has been diversifying its production capabilities for some time in an effort to ameliorate the mood swings of its core DRAM market.
Diversification products now include NAND Flash, CellularRAM devices for mobile phone applications, RLDRAM II reduced latency network and cache memory devices and CMOS image sensors. All the diversified ICs use Micron's core DRAM product and process technology.
Toshiba has introduced a 64bit single-chip MIPS-based reduced instruction set computer (RISC) microprocessor produced on a 90nm process. The TX9956CXBG is the company's first standard microprocessor to use Toshiba's high-performance TX99/H4 CPU core and industry-leading 90nm technology. The seven-stage superscalar pipeline architecture enables simultaneous execution of two instructions. Internal maximum operating frequencies are 533-666MHz with external frequencies up to 133MHz. The device is targeted at diverse applications, including multi-function printers and high-end set-top boxes. Samples are to be available in July 2004. Volume production is scheduled to start in November 2004.
Fabless semiconductor supplier Integrated Silicon Solution (ISSI) claims that revenues in its June 2004 quarter were impacted by wafer shortages, particularly from China foundry SMIC. However, the company goes on to say that it also observed "a slowdown in demand during the month of June for our devices". This slowdown is seasonal and will "pick up" during August, the company says.
Matrix Semiconductor has renewed a mutual agreement with Cypress Semiconductor for the continued development of its three-dimensional semiconductor technology. Matrix is aiming to develop high-density, low-cost, 3-D Memory (3DM) semiconductors at Cypress's R&D services within its Silicon Valley Technology centre (SVTC). Cypress is operating as a full-service development facility on Matrix' behalf, managing all equipment maintenance, tool modification and mask generation throughout the pilot manufacturing. Matrix uses Taiwan's TSMC foundry as its production facility.
Matrix' patented 3DM technology stacks memory arrays vertically. Matrix claims an archival storage device capable of storing data for more than 100 years. The memory is manufactured on a standard CMOS process, using existing semiconductor materials and production equipment. While not the first to attempt development of 3-D circuits, Matrix claims to be the first to devise and implement practical methods for producing them in high volume.
