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Motorola subsidiary Freescale Semiconductor has selected Arch Microelectronic Materials' bi-layer photoresist for its CMOS technology and plans to use the resist on multiple layers in its process.

Motorola subsidiary Freescale Semiconductor has selected Arch Microelectronic Materials' bi-layer photoresist for its CMOS technology and plans to use the resist on multiple layers in its process. Bi-layer resists can improve the planarisation of demanding topographies, control the reflectivity of film stacks, and provide superior etch resistance while controlling the size and shape of demanding features.

Scientists at Freescale Semiconductor and Arch Microelectronic Materials' advanced photoresist centre in Rhode Island have been collaborating on deep ultraviolet (UV), bi-layer photoresists and process development for the past three years. This relationship has resulted in bi-layer resist materials and processes that can withstand the rigours of high volume manufacturing.

Raytheon has ordered Veeco Instruments' GEN20 molecular beam epitaxy (MBE) system. The tool will be used to develop III-V electronic devices. The GEN20 can grow a single 100mm or three 50mm wafers. The system features a vertical source-to-substrate geometry that enables large source capacity and optional integrated e-beam material delivery.

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