Compound semiconductor
Motorola subsidiary Freescale Semiconductor has introduced four new high-performance general-purpose amplifiers (GPAs) designed for a broad range of Class A, small-signal, high linearity radio frequency (RF) applications. The heterojunction bipolar transistor (HBT) devices are manufactured on indium gallium phosphide (InGaP) technology. Freescale manufactures its InGaP HBT products at its GaAs fab in Tempe, Arizona. The amplifiers are the first in Freescale's newly established portfolio of GPA devices for applications with frequencies ranging from 0.04 to 3.6GHz.
Thermal resistance is 30degreesC/W. Target applications include cellular infrastructure, personal communications services (PCS), broadband wireless access (BWA), wireless local loop (WLL), Personal Handy-phone systems (PHS), cable television (CATV) systems and VHF/UHF radio, universal mobile telecommunications systems (UMTS). Three of the devices are now in full production with samples of the fourth planned for Q4 2004. Additional GPA portfolio devices are planned to sample in early 2005.
