News Article
Promising new copper planarisation technique
US-based ACM Research has developed an electro-chemical copper-planarisation process for oxidising tantalum (Ta) barrier layers used in copper low-k interconnect.
US-based ACM Research has developed an electro-chemical copper-planarisation process for oxidising tantalum (Ta) barrier layers used in copper low-k interconnect.
The new technology ensures that any low-k or ultra low-k film used for interconnects remains sealed from the moment it is capped with a Ta barrier film and throughout all subsequent process steps.
According to ACM president and CEO David Wang, this approach provides key advantages over conventional chemical mechanical planarisation techniques
"Our electro-chemical process anodises the Ta barrier layer into a tantalum-oxide (TaO) dielectric, capping the low-k dielectric film and eliminating the need to remove the barrier layer, as is currently necessary with a conventional CMP process."
The new technology ensures that any low-k or ultra low-k film used for interconnects remains sealed from the moment it is capped with a Ta barrier film and throughout all subsequent process steps.
According to ACM president and CEO David Wang, this approach provides key advantages over conventional chemical mechanical planarisation techniques
"Our electro-chemical process anodises the Ta barrier layer into a tantalum-oxide (TaO) dielectric, capping the low-k dielectric film and eliminating the need to remove the barrier layer, as is currently necessary with a conventional CMP process."