News Article
193nm Immersion litho on track for 45nm half pitch
Industry experts at the 2nd International Symposium on Immersion Lithography, held in Bruges, Belgium, from 12 to 15 September 2005 have concluded that 193nm immersion lithography is the technology for tomorrow and is on track for insertion into volume manufacturing, with good prospects for extendibility to subsequent and extendable for next generations.
Industry experts at the 2nd International Symposium on Immersion Lithography, held in Bruges, Belgium, from 12 to 15 September 2005 have concluded that 193nm immersion lithography is the technology for tomorrow and is on track for insertion into volume manufacturing, with good prospects for extendibility to subsequent and extendable for next generations.
“A record in scientists, With more than 380 lithographers from all over the world, attending the 2nd International Symposium on Immersion Lithography, broad support to proofs the worldwide momentum in developing immersion lithography was clearly shown,” said Kurt Ronse, general chair of the Symposium and Lithography Department Director at IMEC. “This strong drive has resulted in significant progress on all critical issues and a general acceptance that immersion lithography is will be the a key technology for 65nm and 45nm half pitch and beyond for critical layer printing.”
At the conclusion, the Symposium steering group committee identified that immersion lithography is now generally widely considered as the next litho technology. It is firmly on track for 645nm half pitch insertion into volume manufacturing and extension to 45nm half pitch. Most of the critical issues such as fluids and optical materials have been overcome.
The latest timelines of the immersion scanner suppliers remain unchanged. Understanding of resist and top coat interaction mechanisms with water is clearly under way and gradualcontinuous improvements have been reported. Defectivity is still a major issue and will remain so. However, considerable progress has been achieved compared to last years Symposium with significant understanding of the immersion defect generation mechanisms. Process defects are being widely explored now. First solutions are in preparation which proves that immersion is on its way.
“A record in scientists, With more than 380 lithographers from all over the world, attending the 2nd International Symposium on Immersion Lithography, broad support to proofs the worldwide momentum in developing immersion lithography was clearly shown,” said Kurt Ronse, general chair of the Symposium and Lithography Department Director at IMEC. “This strong drive has resulted in significant progress on all critical issues and a general acceptance that immersion lithography is will be the a key technology for 65nm and 45nm half pitch and beyond for critical layer printing.”
At the conclusion, the Symposium steering group committee identified that immersion lithography is now generally widely considered as the next litho technology. It is firmly on track for 645nm half pitch insertion into volume manufacturing and extension to 45nm half pitch. Most of the critical issues such as fluids and optical materials have been overcome.
The latest timelines of the immersion scanner suppliers remain unchanged. Understanding of resist and top coat interaction mechanisms with water is clearly under way and gradualcontinuous improvements have been reported. Defectivity is still a major issue and will remain so. However, considerable progress has been achieved compared to last years Symposium with significant understanding of the immersion defect generation mechanisms. Process defects are being widely explored now. First solutions are in preparation which proves that immersion is on its way.
