News Article
Soitec and SEZ collaborate on SOI
Soitec Group and SEZ have announced they have initiated a joint development program (JDP) intended to speed the industrialization of next-generation strained silicon-on-insulator (sSOI) substrates.
Soitec Group and SEZ have announced they have initiated a joint development program (JDP) intended to speed the industrialization of next-generation strained silicon-on-insulator (sSOI) substrates. Under the terms of the JDP, the two companies will leverage Soitecs engineered substrates and SEZs single-wafer, wet-processing technology to develop new wet-etch processes designed to optimize total germanium removal in sSOI manufacturing.
Company officials report that effective and complete removal of germanium is a key step in the sSOI manufacturing process as silicon germanium (SiGe) must be used to produce the silicon-layer strain that is essential to sSOIs functionality. Ultimately, it is the combined power of this strained silicon layer and the SOI substrates that allow chipmakers to harness the powerful performance and power dissipation benefits afforded by sSOI substrates. Key to this, single-wafer processing has emerged as a promising solution for enabling selective control during the germanium etching process—removing only the desired material without damaging underlying material layers.
According to Carlos Mazuré, Soitecs chief technology officer, “This joint work is another step in Soitecs strategy to build the industry infrastructure that will ensure manufacturability and broad commercial availability of future generations of sSOI substrates. SEZs single-wafer technology offers benefits for selective etch of SiGe that allows more efficient germanium removal. At the same time, Soitec and SEZ will work together to optimize quality, throughput and cost of ownership, creating a reproducible process that can potentially be used to manufacture other complex materials.”
“We are pleased to be entering into this collaborative effort with Soitec,” stated Dr. Gerald Wagner, director of process development for SEZ. “SEZ is continually involved in research and development surrounding new materials and process solutions. Working with an industry leader like Soitec will enable us to access their extensive expertise in sSOI and other advanced substrates. By pairing the benefits of their Smart Cut technology with those of our single-wafer, wet-etch technology, we plan to develop a new process application that may prove essential to producing sSOI substrates in volume quantities.”
Company officials report that effective and complete removal of germanium is a key step in the sSOI manufacturing process as silicon germanium (SiGe) must be used to produce the silicon-layer strain that is essential to sSOIs functionality. Ultimately, it is the combined power of this strained silicon layer and the SOI substrates that allow chipmakers to harness the powerful performance and power dissipation benefits afforded by sSOI substrates. Key to this, single-wafer processing has emerged as a promising solution for enabling selective control during the germanium etching process—removing only the desired material without damaging underlying material layers.
According to Carlos Mazuré, Soitecs chief technology officer, “This joint work is another step in Soitecs strategy to build the industry infrastructure that will ensure manufacturability and broad commercial availability of future generations of sSOI substrates. SEZs single-wafer technology offers benefits for selective etch of SiGe that allows more efficient germanium removal. At the same time, Soitec and SEZ will work together to optimize quality, throughput and cost of ownership, creating a reproducible process that can potentially be used to manufacture other complex materials.”
“We are pleased to be entering into this collaborative effort with Soitec,” stated Dr. Gerald Wagner, director of process development for SEZ. “SEZ is continually involved in research and development surrounding new materials and process solutions. Working with an industry leader like Soitec will enable us to access their extensive expertise in sSOI and other advanced substrates. By pairing the benefits of their Smart Cut technology with those of our single-wafer, wet-etch technology, we plan to develop a new process application that may prove essential to producing sSOI substrates in volume quantities.”
