News Article
Research into RF MOSFETS moves forward
UK research company Innos is participating in a collaborative project with Liverpool and Southampton universities that has demonstrated how high performance MOSFETs used in radio frequency applications can be manufactured at a low cost.
The advance could enable more small to medium sized businesses to enter the radio frequency applications market and allow RF to be used as part of a sensor network within ‘ambient intelligence systems.
The research shows how the adoption of vertical MOS transistors could enable a route to ultra-short channel MOS transistors using relaxed (hence cheaper) lithography rules and a reduced footprint. Classically, such devices are lateral but expensive lithography is required to achieve the ultra short channel lengths needed for a vertical approach. The shortcomings of vertical transistors have been addressed by a number of novel solutions to drastically reduce parasitic effects generated by the geometric configuration of the device.
The resultant transistors could play a significant role in the wider vision of ‘ambient intelligence, whereby a number of sensors and processors are linked by radio frequency. A simple application would be clothing tagged with sensors instructing a washing machine the best settings to wash at, when the items are placed in the drum.
“Innos dedicated a lot of effort on fabrication, process development as well as careful and close monitoring of all the technological steps involved when implementing the designs,” said Liverpool University lecturer Octavian Buiu. “In addition, we have secured funding for a number of future ventures and we expect to have a similar efficient and successful collaboration with Innos on planned projects.”
The research shows how the adoption of vertical MOS transistors could enable a route to ultra-short channel MOS transistors using relaxed (hence cheaper) lithography rules and a reduced footprint. Classically, such devices are lateral but expensive lithography is required to achieve the ultra short channel lengths needed for a vertical approach. The shortcomings of vertical transistors have been addressed by a number of novel solutions to drastically reduce parasitic effects generated by the geometric configuration of the device.
The resultant transistors could play a significant role in the wider vision of ‘ambient intelligence, whereby a number of sensors and processors are linked by radio frequency. A simple application would be clothing tagged with sensors instructing a washing machine the best settings to wash at, when the items are placed in the drum.
“Innos dedicated a lot of effort on fabrication, process development as well as careful and close monitoring of all the technological steps involved when implementing the designs,” said Liverpool University lecturer Octavian Buiu. “In addition, we have secured funding for a number of future ventures and we expect to have a similar efficient and successful collaboration with Innos on planned projects.”
