News Article
WiSpry and Jazz to create RF-MEMS
WiSpry and Jazz Semiconductor, have announced that they have partnered to create innovative RF-MEMS offerings using Jazz's leading-edge RF-CMOS processes.
WiSpry and Jazz Semiconductor, have announced that they have partnered to create innovative RF-MEMS offerings using Jazz's leading-edge RF-CMOS processes. The program has successfully demonstrated the feasibility of commercially manufacturing WiSpry's digitally tunable capacitor devices into Jazz Semiconductor's 200mm wafer fab and provides commercial availability of highly integrated RF-MEMS devices, built upon Jazz's leading-edge processes.
"WiSpry believes that RF-MEMS devices will be a disruptive element in the design of future RF systems," said Jeff Hilbert, president and CEO, WiSpry, Inc. "However, as with all components in the mobile domain, requirements such as price, power and performance are key. Our success in bringing this exciting technology to market depends on our ability to leverage existing semiconductor processes, permitting us to drive down cost and successively increase integration with other RF technologies."
The companies plan to integrate RF-MEMS digital capacitors and other functions into active silicon circuitry, enabling a roadmap to higher levels of integration with RF circuitry such as low noise amplifiers (LNAs), power amplifiers (PAs) and transceiver technology. Solving one of the key barriers to leveraging standard low cost RF packaging techniques, the companies are co-developing techniques for commercial wafer level sealing of RF-MEMS devices. Wafer level sealing is one of the key components necessary to provide low cost, high volume commercial RF-MEMS products.
"WiSpry believes that RF-MEMS devices will be a disruptive element in the design of future RF systems," said Jeff Hilbert, president and CEO, WiSpry, Inc. "However, as with all components in the mobile domain, requirements such as price, power and performance are key. Our success in bringing this exciting technology to market depends on our ability to leverage existing semiconductor processes, permitting us to drive down cost and successively increase integration with other RF technologies."
The companies plan to integrate RF-MEMS digital capacitors and other functions into active silicon circuitry, enabling a roadmap to higher levels of integration with RF circuitry such as low noise amplifiers (LNAs), power amplifiers (PAs) and transceiver technology. Solving one of the key barriers to leveraging standard low cost RF packaging techniques, the companies are co-developing techniques for commercial wafer level sealing of RF-MEMS devices. Wafer level sealing is one of the key components necessary to provide low cost, high volume commercial RF-MEMS products.
