News Article
ASM Enters Mainland China with 300 mm Epitaxial System
ASM International N.V. announced that it has sold a 300 mm epitaxial reactor into Mainland China.
ASM International N.V. announced that it has sold a 300 mm epitaxial reactor into Mainland China. The system, shipped in Q4 2005, was ordered by the General Research Institute for Non-ferrous Metals (GRINM), one of the largest Chinese research institutes for semiconductor related applications.
“Although initially used for 12 inch silicon epitaxial wafers, the Epsilon 3200 system going into our Beijing facility was chosen specifically to expand into studies of silicon germanium (SiGe), strained silicon as well as other new research areas,” said Dr. Hailing Tu, president of GRINM.”
The main use of the Epsilon 3200 is for epitaxial growth of silicon and SiGe alloys. This includes advanced blanket and selective epitaxial growth processes for recessed and elevated source/drain structures as used in state-of-the-art CMOS transistors, as well as the integration of strained silicon in SOI wafer technology.
“The addition of GRINM to our customer base is a huge win for ASM and plays an important role in our China market strategy, especially since GRINM is engaged in a wide range of government funded, advanced scientific and engineering programs, and is capable of spinning off large commercial projects.” Commented Dr. Armand Ferro, ASM’s Epsilon Business Unit Manager.
“With GRINM’s adoption of the 300 mm Epsilon and development of advanced applications underway, ASM expects to continue penetration into China’s 300 mm market,” concluded Dr. Ferro.
“Although initially used for 12 inch silicon epitaxial wafers, the Epsilon 3200 system going into our Beijing facility was chosen specifically to expand into studies of silicon germanium (SiGe), strained silicon as well as other new research areas,” said Dr. Hailing Tu, president of GRINM.”
The main use of the Epsilon 3200 is for epitaxial growth of silicon and SiGe alloys. This includes advanced blanket and selective epitaxial growth processes for recessed and elevated source/drain structures as used in state-of-the-art CMOS transistors, as well as the integration of strained silicon in SOI wafer technology.
“The addition of GRINM to our customer base is a huge win for ASM and plays an important role in our China market strategy, especially since GRINM is engaged in a wide range of government funded, advanced scientific and engineering programs, and is capable of spinning off large commercial projects.” Commented Dr. Armand Ferro, ASM’s Epsilon Business Unit Manager.
“With GRINM’s adoption of the 300 mm Epsilon and development of advanced applications underway, ASM expects to continue penetration into China’s 300 mm market,” concluded Dr. Ferro.
