News Article
Fujitsu plans New 65nm Process Technology Fab
Fujitsu Limited announced that it will construct a new fab to mass-produce logic semiconductors employing leading-edge 65-nanometer (nm) process technology and 300 millimetre (mm) wafers.
Fujitsu Limited announced that it will construct a new fab to mass-produce logic semiconductors employing leading-edge 65-nanometer (nm) process technology and 300 millimetre (mm) wafers. The fab will be constructed at Fujitsu's Mie semiconductor plant, in Mie prefecture of central Japan, as the second 300mm fab of the plant and will be referred to as 300mm Fab No2, which will feature a dual-level clean room structure. Construction is scheduled within fiscal 2006 (April 2006 - March 2007) and will become operational from April 2007, with volume shipments expected to start from July 2007.
During the two-year period until the end of fiscal 2007, Fujitsu will invest approximately 120 billion-yen in the new fab and production capacity will reach 10,000 wafers per month. Further investments will be made in stages as the company evaluates trends in market demand. Fujitsu expects the maximum capacity of the facility will be 25,000 wafers per month.
During the two-year period until the end of fiscal 2007, Fujitsu will invest approximately 120 billion-yen in the new fab and production capacity will reach 10,000 wafers per month. Further investments will be made in stages as the company evaluates trends in market demand. Fujitsu expects the maximum capacity of the facility will be 25,000 wafers per month.
