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JSR and IBM demonstrate sub-30nm patterning

JSR Corporation of Tokyo, and its US operations, JSR Micro, Inc., announced that it has, through a long-standing partnership with IBM, further advanced the viability of immersion lithography by successfully demonstrating sub-30nm patterning.
JSR Corporation of Tokyo, and its US operations, JSR Micro, Inc., announced that it has, through a long-standing partnership with IBM, further advanced the viability of immersion lithography by successfully demonstrating sub-30nm patterning. The 29.9nm 1:1 patterns were created using JSR’s high refractive index liquid as the immersion fluid and ArF photoresist in conjunction with IBM’s high index optical element on its NEMO immersion lithography tool.

“These results clearly demonstrate that high index immersion lithography can take the IC industry beyond the 32nm node without using extreme lithography techniques,” said Dr. Robert D. Allen, manager of lithography materials, at IBM’s Almaden Research Centre.

JSR’s SOLOnX technology, a platform based on its high refractive index fluid, has had strong success in extending the limits of ArF lithography systems. Preliminary results are showing viable results sooner than potentially competing technologies.

“We believe that the introduction of high refractive index liquid imaging will enable the extension of ArF lithography over two technology nodes,” said Mark Slezak, technical manager of JSR Micro, Inc. “As an industry we face tough resourcing questions about which lithography technology is going to allow us to be successful at the next manufacturing node. This gives us another data point for making those decisions.”
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