Technologists Back 193 nm Immersion and EUV
Semiconductor manufacturers and their suppliers appear poised to aggressively follow the chip industry's roadmap for extending current lithography technologies and introducing new ones, a SEMATECH-sponsored Litho Forum found recently.
The Forum, a three-day gathering of global lithography experts, provided extensive readiness assessments of candidate lithography technologies for the 32 nm half-pitch and beyond technology generations. A subsequent survey of attendees showed that chip-makers and equipment suppliers foresee the introduction of 45 nm half-pitch manufacturing in 2009, and the beginning of 32 nm half-pitch production in 2012.
"The surveys indicated an aggressive adherence to the half-pitch targets identified by the International Technology Roadmap for Semiconductors (ITRS)," said Michael Lercel, SEMATECH Lithography director and conference chair. "However, cost concerns for new approaches are in the forefront of many people's minds."
For manufacturing at 45 nm in 2009, participants indicated a predominant preference for 193 nm, single-exposure immersion lithography, with alternatives seen as double-exposure 193 nm immersion and conventional ("dry") 193 nm litho. For 32 nm in 2012, the preferred technology was extreme ultraviolet lithography (EUVL), with interest in 193 nm immersion using double exposure. Finally, EUVL was attendees' overwhelming choice for manufacturing at 22 nm in 2015.
"The rise of interest in 193 nm double exposure was notable, but double exposure never became the preferred option at any node in the survey, likely because of cost issues," Lercel said. Bernie Roman, Litho Forum program chairman, noted: "Survey feedback from lithography end-users also showed concern with extendibility of various 193 nm options beyond 32 nm half-pitch."
Conducted May 22-24, the Forum attracted more than 200 lithographers and executives from North America, Europe and Asia. The current state of more than two dozen technologies and activities supporting six different lithography options—including resists, masks, advanced fluids, lens materials, and overall tool readiness—were presented by representatives from companies world-wide.
Advocates reported on the status of 193 nm lithography, EUVL, and alternative technologies, such as maskless lithography and nano-imprinting. At the conclusion of presentations, attendees were asked to take an anonymous survey of their companies' most likely technology choices for manufacturing in 2009, 2012, and 2015. Detailed results were compiled and shared with participants and SEMATECH member companies.
"Once again, the lithography community was presented with multiple potential solutions for the 32 nm half-pitch generation and beyond" said Giang Dao, Forum keynote speaker and SEMATECH's chief operating officer for advanced technologies. "Given the rising costs and decreasing funding for R&D, the industry needs a critical and objective assessment of each of these options, so that we all can focus on the best solutions for bringing them into manufacturing when needed."
Dao added: "The resulting information and guidance will be invaluable in helping SEMATECH extend current technologies, build infrastructure for emerging ones, and narrow the options for promising alternatives. We believe it will be just as useful for other participants in the industry as they formulate their technology strategies."
SEMATECH organised the first Litho Forum in 2004 to focus industry attention on rapidly proliferating technology choices. Participants in this year's meeting expressed interest in attending a third Litho Forum in 2007 or 2008.
