+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
*/
News Article

Samsung Electronics Qualifies 65nm Low Power process technology

News
Samsung Electronics, Co., Ltd. announced the qualification of its 65-nanometer (nm) low power process technology manufactured in the company's state of the art 300mm dedicated logic fab. As the consumer handheld device market continues on its phenomenal growth path, the cost efficiencies and power/performance advantages associated with this technology node will enable electronics manufacturers to meet consumers' demand for greater multi-media functionality.

"Dynamics in the semiconductor market are moving more companies to rely on high-end contract manufacturing," said Ana Molnar Hunter, vice president of technology for Samsung Semiconductor's foundry business. "Our production ready advanced process technology offers our foundry customers the ability to integrate more features while maintaining very low power consumption and a fast ramp into high volume production."

The process offering includes a family of transistors ranging from very low leakage to high performance for low power applications with up to 9 levels of Cu interconnect. SRAM bit cells, optimized for performance or ultra low leakage, e-fuse circuits, and mixed signal device components are all available as standard process offerings.Samsung's state-of-the-art 300mm fabrication facility, S1 Line, in Giheung, Korea, offers foundry customers high volume manufacturing for advanced technology chips with continual expansion through 2007.

Samsung's new 65nm low power process technology along with the corresponding DRC, LVS, PEX and DFM decks is also compatible with Common Platform technology partners, IBM and Chartered Semiconductor Manufacturing, for those customers who require multi-source availability.Complementing its new 65nm low power process technology, Samsung will offer its foundry customers full access to an extensive portfolio of internal and licensed IP, which includes ARM cores, high speed interfaces and various mixed signal components. Recently added to Samsung's library in February 2006, the ARM Artisan family of physical IP further extends the company's design enablement support for the 65nm process node.

Samsung also will offer customers full design kits including a newly added RF-design kit for the 65nm low power process. The kit is comprised of a robust set of fully characterized and modeled RF components including inductors, varactors, capacitors as well as core and I/O transistors. Transistor noise models and substrate noise coupling guidelines are also included in the design kit.

×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
Logo
×
Register - Step 1

You may choose to subscribe to the Silicon Semiconductor Magazine, the Silicon Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: