News Article
MoSys launches 65nm macro program
MoSys, Inc. announced that it has completed the basic research and development work for porting MoSys' 1T-SRAM embedded memory technology to the advanced 65nm semiconductor technology node and has initiated macro design work in order to move these designs into high volume consumer SoC's.
Among these initiatives, the company has signed the first 65nm technology license and royalty agreement with a major integrated device manufacturer (IDM). This agreement, which was expected to sign in the second quarter, has now been completed.Additionally, design work has begun to create 65nm implementations of the pre-configured CLASSIC Macro product line with leading Pure-Play Foundries."The density and power advantages of our 1T-SRAM technology continue to improve as we scale to smaller geometries like 65nm," mentioned Chet Silvestri, Chief Executive Officer of MoSys, "and we are pleased to be working with industry-leading semiconductor manufacturers in order to make our 65nm implementations available to SoC designers."
