Process control of 45nm new materials
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The BedeMetrix-L will be installed at IMEC's 300mm research facility. The BedeMetrix-L uses a combination of High Resolution X- ray Diffraction (HRXRD), X-ray Diffraction (XRD) and X-ray Reflectivity (XRR) techniques on a single platform for a wide range of front and back end process control applications including strained silicon, high-k gate dielectrics, metal gates, barrier metals, interconnects and porous low-k ILD.
Dr. Luc Van den hove, Vice President, Silicon Process and Device Technology of IMEC, said, "Bede X-ray Metrology will be used for the measurement of critical process control parameters needed in the use of advanced semiconductor materials for device fabrication. We are pleased that our research will benefit from Bede's expertise in X-ray based process metrology. X-ray metrology is an important technology for controlling semiconductor processes as the technology nodes shrink, especially at 45nm and below. Unlike other types of metrology, X-rays provide the structural information essential to control new material processes while improving yield."
Frank Hochstenbach, Director of Sales and Marketing, and responsible for customer partnerships, of Bede X-ray Metrology said, "We are delighted that IMEC have selected the BedeMetrix-L, and that we are collaborating with one of the leading R&D centres in the world. It will enable us to benefit from their expertise in the latest process technologies and advanced materials. Jointly we will be able to offer solutions for the various IMEC partners on critical process control. I am sure that both Bede and IMEC will find this collaboration of great benefit in the better understanding of new materials and their impact on the semiconductor devices of the future."
