VeriSilicon and MoSys announce collaboration
Under the terms of the partnership, VeriSilicon will add the 1T-SRAM capability to its intellectual property (IP) portfolio offering, for use into customer SoC designs, on multiple foundries.
VeriSilicon is a fabless ASIC design foundry focusing on providing vertical platform solutions, system knowledge and services to help SoC customers go from chip specification to production. Under the partnership, customers now have the option to work directly with VeriSilicon to integrate MoSys' innovative memory technology into their designs across a wide range of foundry options and advanced process geometries, such as 90 nm. By leveraging MoSys' patented 1T-SRAM ultra high density memory offering, customers are able to significantly lower their silicon costs while maintaining high performance and low power.
"We are very happy to work with VeriSilicon to proliferate our technology to a wider range of customers. Over the last few years, VeriSilicon has garnered numerous industry awards by amassing a successful track record across an impressive world wide customer base. Our expectation is that the combination of our pioneering memory technology and VeriSilicon leading ASIC capabilities will result in uniquely optimal silicon solutions for numerous types of applications," said Chet Silvestri, chief executive officer of MoSys.
"By working with a technology leader like MoSys, our customers can leverage our IP products and design services to develop solutions in silicon and to meet their most demanding product requirements," said Federico Arcelli, Corporate vice-president of WW sales & marketing at VeriSilicon.
