Chartered extends technology development agreement with IBM to 32nm
Chartered Semiconductor Manufacturing has announced the extension of its joint development efforts with IBM to include 32-nanometer (nm) bulk complementary metal oxide semiconductor (CMOS) technology. Financial terms were not disclosed.
The extension to 32nm builds on the multi-year agreement that the two companies first signed in November 2002. The joint collaboration has enabled Chartered to accelerate its technology roadmap for manufacturing solutions, spanning four major generations of advanced process technology, including 90nm, 65nm, 45nm and 32nm logic processes.
"The combination of Chartered's manufacturing horsepower and IBM's innovation roadmap positions us well for continued developments in the future," said Lisa Su, vice president, Semiconductor Research and Development Center, IBM.
"We are pleased to be jointly collaborating on our fourth process generation with IBM," said Liang-Choo "LC" Hsia, senior vice president, technology development at Chartered.
As with previous nodes, 32nm development activities will be conducted at IBM's 300 millimeter (mm) semiconductor fabrication facility in East Fishkill, N.Y. Each company will have the ability to implement the jointly developed processes in its own manufacturing facilities.