Nikon, CEA-Leti announce partnership for double patterning and exposure technology
Nikon Corporation announced a Joint Development Program with CEA-Leti. The work will examine the potential of Double Exposure and Double Patterning technology for 32 nm semiconductor devices, and will utilize a Nikon scanner located in CEA-Leti's Nanotec 300 research facility.
Double patterning was added to the ITRS roadmap in 2006 as a potential solution for 32 nm lithography. EUVL and high-index immersion are also listed as potential solutions on the ITRS roadmap, but the development timeline for those technologies may limit them from being used for 32 nm applications. Nikon is working with key research centres and leading-edge IC manufacturers, and partnering with design, mask, and resist companies to ensure a manufacturable solution is available in time for the 32 nm process.
"Leti offers a state-of-the-art facility with all of the processes required for Double Patterning," stated Toshikazu Umatate, Executive Officer, Precision Equipment Company, Nikon Corporation. "Our collaboration with Leti allows us to leverage their process expertise and our lithography knowledge to develop the best exposure tools and processes for this challenging technology."
"The partnership with Nikon is a great opportunity to develop all aspects of Double Processing," said Olivier Demolliens, head of the Nanotec Division at CEA-Leti. "DE/DP is the main solution foreseen for the 32 nm process, bridging the gap between immersion and EUV, but still a lot of issues need to be addressed on equipment, process, mask and CAD. Together with Nikon's tool and expertise, we have built a consortium which will address all these developments."
