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Optoelectronics R&D system successfully installed at German university

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Aixtron announced that a new Thomas Swan 3x2" Close Coupled Showerhead (CCS) epitaxy reactor has successfully been installed at the University of Braunschweig, Institute of Semiconductor Technology, Braunschweig, Germany and is in operation.

Aixtron announced that a new Thomas Swan 3x2" Close Coupled Showerhead (CCS) epitaxy reactor has successfully been installed at the University of Braunschweig, Institute of Semiconductor Technology, Braunschweig, Germany and is in operation. The system will provide high quality Gallium Nitride (GaN) and Zinc Oxide (ZnO) epitaxial materials for research of basic material properties and of optoelectronic devices. It complements the university's other materials research tools, including an AIX 200 MOCVD system. Zinc oxide (ZnO) is a II-VI compound wide bandgap semiconductor. Therefore, it is attractive as a material for short wavelength and UV light emitters such as LEDs, lasers as well as light detectors. Because ZnO is a transparent and conducting substrate, it is expected to produce brighter LEDs than with, for example, silicon carbide or sapphire. When doped with magnesium, devices operating in the deeper UV region are possible resulting in application for solar blind detectors.

Prof. Dr. Andreas Waag, Director of the Institute of Semiconductor Technology at the University of Braunschweig, comments: "Thomas Swan's CCS technology was chosen because the capabilities of the Thomas Swan system are well-suited to our needs for material uniformity, thickness, doping, and composition. In addition, we have long-standing good relations with Aixtron. We have been very satisfied with the performance of our existing Aixtron systems. Now we require the newest generation of MOCVD processes for even more sophisticated optoelectronics and nanostructures. The CCS configuration gives it clear advantages over other vertical MOCVD reactors and will be the foundation for our research projects in the years to come."

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