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Next steps revealed for 32nm node and beyond

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The SAFC Hitech business segment within SAFC, a member of the Sigma-Aldrich Group has announced details of its new five-year chemical roadmap for Metalorganic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) processes on silicon semiconductor substrates.
The SAFC Hitech business segment within SAFC, a member of the Sigma-Aldrich Group has announced details of its new five-year chemical roadmap for Metalorganic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD) processes on silicon semiconductor substrates. The new SAFC Hitech silicon semiconductor roadmap adheres to the International Technology Roadmap for Semiconductors (ITRS) guidelines and maps an extensive program of materials development across a number of layers within the semiconductor. These include materials for high-k dielectrics in logic and memory devices, additional functional memory architectures, electrodes in DRAM or gate stacks, barrier layers, wiring, and low-k dielectrics. "As the silicon semiconductor industry moves from the 65nm node through 45nm, 32nm and beyond, demands placed on the electrophysics of the silicon device require the development of new enabling chemistries," commented SAFC Hitech President, Barry Leese. "We believe the semiconductor market is entering an ‘age of chemistry' where continual materials evolution will be vital to enable future technology nodes. As our roadmap indicates, SAFC Hitech is positioning itself at the forefront of this material development with a number of advanced materials in production." "Silicon oxides and other ‘traditional' materials have long been used as pre-metal dielectrics. What we are heralding to the industry is an expansion of the periodic table and the development of novel materials utilising previously untried elements. We are already employing oxides and binary oxides such as aluminum oxides, hafnium oxides, hafnium silicates and zirconium oxides and complex rare earth oxides in our production processes. These metal oxides have a very high-k value and will continue to be widely exploited in the next couple of years if the industry stays on course with Moore's law," added Dr. Peter Heys, Director of Research and Development at SAFC Hitech. "Over the course of the new roadmap, SAFC Hitech will be introducing more complex high-k oxides for silicon semiconductor manufacturing, such as hafnium zirconium based layers, which offer greater flexibility as they can be doped with other materials like silicon, nitrogen, aluminum, lanthanum and yttrium to meet individual customer requirements in creating a layer that functions well for a particular device design. Beyond that, the research and development of, for example, lanthanide and strontium chemistries, binary metals and complex metals oxides or iterations of oxides will facilitate the delivery of the 50+ k values needed for future technology nodes," said Dr. Heys. "Looking to the future," concluded Barry Leese, "the materials that are going to be key in high-k dielectrics are those that possess the proper physical chemical characteristics and which meet or exceed the correct requirements in deposition capability across all device architectures. These materials will possess the appropriate electrical properties and must be offered at an acceptable cost to consumers."
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