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Taiwan manufacturer begins 0.13-micron embedded flash process production
Taiwan Semiconductor Manufacturing Company has announced that it has qualified its 0.13-micron embedded flash process and has entered production.
Taiwan Semiconductor Manufacturing Company has announced that it has qualified its 0.13-micron embedded flash process and has entered production. TSMC claims it is the first pure-play foundry to launch production of a fully logic compatible 0.13-micron process featuring embedded flash technology.
The 0.13-micron embedded flash process employs the same split-gate flash cell as the previous generation, enabling easy migration. It is fully compatible with TSMC's logic baseline of 0.13-micron general-purpose process (G) and low power process (LP).
Compatibility also signals that copper wiring comes into play for TSMC's embedded flash process starting with this 0.13-micron node. "Technology savvy factors in our smooth introduction of copper wiring into the embedded flash process. The production launch sgnals another milestone achieved in our history of non-volatile memory (NVM) technology development," said Sam Chen, director of memory platform marketing at TSMC.
"The process's low power transistor makes it ideal for ZigBee/Wibree devices, wireless headsets, hearing aids, SmartCards and other applications requiring ultra low power consumption ranging from 1.2V to 1.5V," Sam added. And the value of this process can be further enhanced by TSMC's comprehensive, embedded flash IP testing support."
