News Article
Technology integration Transition 0.18- to 0.15-Micron Node
Dongbu HiTek has announced that it will soon commence volume production of low-power 8MB/3V static random access memory (SRAM) devices for EMLSI.
Dongbu HiTek has announced that it will soon commence volume production of low-power 8MB/3V static random access memory (SRAM) devices for EMLSI. In shifting the wafer processing node for EMLSI's 8MB/3V devices from 0.18- to 0.15-microns, Dongbu HiTek expects the more compact memory chips to drive higher foundry profit margins as they also enable EMLSI to strengthen its position in the mobile handset market. The new 8MB/3V SRAM devices are expected to begin rolling off Dongbu HiTek's CMOS wafer processing line next month.According to Jae Song, EVP for Dongbu HiTek, the successful transition of EMLSI's 8MB/3V SRAM solution to the 0.15-micron node reflects a win-win fabless/foundry relationship that will continue to flourish. "We continue to collaborate closely with EMLSI with plans to shift its other popular SRAM solutions, notably 2MB/3V and 4MB/5V devices, to the finer 0.15-micron processing node in the near future."He noted that the growing demand for the low-power SRAM devices developed by EMLSI is being driven by the popularity of exciting new mobile and consumer electronic products coming to market. "We believe that EMLSI with Dongbu HiTek's wafer processing support is strongly positioned to deliver low-power SRAM solutions into this expanding market."
