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Rohm and Haas announces agreement with IBM

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Materials and process development will target next generation devices for implant solutions.
Rohm and Haas Electronic Materials a supplier of advanced lithography materials for the semiconductor industry, has entered into a joint development agreement with IBM to create patterning materials and processes to enable implant at and below the 32 nm node. The focus of the agreement is a joint collaboration to develop total implant solutions for advanced technology nodes. Ion implantation is a set of critical process steps to fabricate various types of transistors, which are the heart of semiconductor devices. The implant process selectively introduces electrical charges into extremely small areas that have been defined by preceding lithographic steps. At 32 nm and below, implant lithography has become critical, but poses a major technology hurdle. As semiconductor designs continue to shrink, significant new challenges emerge in controlling implants used in the formation of transistors. It is anticipated that approximately 40 percent of photo levels in advanced logic designs will be implant.

“Finding the right solutions to difficult technical challenges for the next-generation nodes depends not only on strong engineering and design but also close collaboration with leaders in the semiconductor industry,” said Dr. James Fahey, president of Microelectronic Technologies for Rohm and Haas Electronic Materials. “Partnering with IBM will accelerate the development of new materials and ensure that we are on track to meet the needs for 32 and 22 nm nodes.”

“We are proud to be working with Rohm and Haas Electronic Materials, combining IBM’s continued development of lithography solutions with Rohm and Haas’s material expertise,” said George Gomba, Distinguished Engineer and Director of Total Patterning Solutions for IBM Microelectronics. “There are many options for lithography at 32nm and beyond, and this relationship will help to create solutions for these unique challenges.”

Work on the joint collaboration will take place at IBM’s East Fishkill, Yorktown and Albany facilities and at Rohm and Haas Electronic Materials’ Advanced Technology Centre in Marlborough, MA, where completion of its new ultra-high NA 193 nm immersion cluster is expected by June 2008.
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