News Article
Qimonda announces technology breakthrough
DRAM roadmap to 30nm generation. Step change technology to significantly improve productivity.
Qimonda AG a memory supplier, announced its technology roadmap down to the 30nm generation and featuring cell sizes of 4F². Qimonda's innovative Buried Wordline DRAM technology combines high performance, low power consumption and small chip sizes to further advance the company's diversified product portfolio. Qimonda is introducing this technology now in 65nm and plans to begin production of a 1 Gbit DDR2 in the second half of calendar 2008.
"This new technology has the potential to deliver improvements in our productivity and cost per bit that are unprecedented in our company's history" said Kin Wah Loh, President and CEO of Qimonda AG. "We are the first in the industry to unveil a DRAM technology roadmap down to the 30nm generation, enabling cell sizes as small as 4F². The introduction is the result of our continuous innovation as a leader in the development of memory products. This step also opens up further partnering opportunities."
Qimonda targets to start mass production of 46nm Buried Wordline DRAM technology in the second half of 2009. This node will offer more than twice the bits per wafer over the company's 58nm trench technology. The company expects an additional one time investment of approximately Euro 100 million in total during financial years 2009 and 2010 to convert its existing in house trench capacities.
"This new technology has the potential to deliver improvements in our productivity and cost per bit that are unprecedented in our company's history" said Kin Wah Loh, President and CEO of Qimonda AG. "We are the first in the industry to unveil a DRAM technology roadmap down to the 30nm generation, enabling cell sizes as small as 4F². The introduction is the result of our continuous innovation as a leader in the development of memory products. This step also opens up further partnering opportunities."
Qimonda targets to start mass production of 46nm Buried Wordline DRAM technology in the second half of 2009. This node will offer more than twice the bits per wafer over the company's 58nm trench technology. The company expects an additional one time investment of approximately Euro 100 million in total during financial years 2009 and 2010 to convert its existing in house trench capacities.
