News Article
Rohm and Haas opens $60 million immersion lithography facility
Rohm
and Haas Electronic Materials announced the recent opening of its new
$60 million immersion lithography facility to support its extensive
research and development of advanced 193 nanometre (nm) lithography
materials used in the manufacture of semiconductor devices. The
milestone was marked by an opening ceremony held on June 26 that was
attended by employees, vendors and representatives from the local
community.
The new facility, which is housed in
the company’s Advanced Technology Centre (ATC) in Marlborough, MA,
includes an ASML TWINSCAN XT: 1900Gi 193 nm Step and Scan system, a
300 mm coat/develop track and state of the art defect and metrology
tools. The equipment and facility are fully installed and processing
wafers.
“With the installation of the 193 nm immersion scanner and the infrastructure to process 300 mm wafers, we now have the same equipment our leading-edge customers are using,” said Dr. Jim Fahey, president of Microelectronic Technologies, Rohm and Haas Electronic Materials, in remarks during the opening ceremony. “This investment gives us the ability to correlate with customers and optimise our materials for their applications beyond the 45 nm node.”
The new immersion lithography facility supports the company’s efforts to develop 193 nm photoresists and advanced patterning materials, such as anti reflectants and topcoats, for immersion lithography. The capability will support development work being performed at the Marlborough site and other Microelectronic Technologies technology centres around the world.
“This large investment represents a significant commitment to our customers around the globe,” said Fahey. “The facility will help accelerate innovation of materials, allowing us to respond to customer requests quickly as they develop the semiconductor devices that will power a whole new generation of electronics.”
The $60 million investment in the ATC is in addition to the original $30 million facility, which opened in 2003.
“With the installation of the 193 nm immersion scanner and the infrastructure to process 300 mm wafers, we now have the same equipment our leading-edge customers are using,” said Dr. Jim Fahey, president of Microelectronic Technologies, Rohm and Haas Electronic Materials, in remarks during the opening ceremony. “This investment gives us the ability to correlate with customers and optimise our materials for their applications beyond the 45 nm node.”
The new immersion lithography facility supports the company’s efforts to develop 193 nm photoresists and advanced patterning materials, such as anti reflectants and topcoats, for immersion lithography. The capability will support development work being performed at the Marlborough site and other Microelectronic Technologies technology centres around the world.
“This large investment represents a significant commitment to our customers around the globe,” said Fahey. “The facility will help accelerate innovation of materials, allowing us to respond to customer requests quickly as they develop the semiconductor devices that will power a whole new generation of electronics.”
The $60 million investment in the ATC is in addition to the original $30 million facility, which opened in 2003.
