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Thursday 9th September 2004
Dr Wolfgang Ziebart took over as CEO of Infineon Technologies on September 1, 2004.
Thursday 9th September 2004
Intel lowered its revenue expectation for Q3 2004 to between $8.3bn and $8.6bn, as compared to its previous prediction of $8.6bn to $9.2bn.
Thursday 9th September 2004
ASML and Nikon announced a mutual agreement to request stays of the legal and administrative proceedings in each jurisdiction in which they have been pursuing claims related to intellectual property.
Wednesday 8th September 2004
Intel has built fully functional 70Mbit static random access memory (SRAM) chips with more than half a billion transistors on a die area of 110mm2 using a 65nm process technology. The transistor gates measure 35nm, approximately 30% smaller than the gate lengths on the company's previous 90nm technology. Each SRAM memory cell has six transistors packed into an area of 0.57micron2.
Wednesday 8th September 2004
Taylor Hobson, IQE, and Applied Multilayers are to take part in a new, UK government project to develop new nano metrology technologies with a GBP1mn share of a GBP18mn UK government grant to fund research and product development. Other partners include the UK National Physical Laboratory and The Centre for Precision Technologies at The University of Huddersfield.
Wednesday 8th September 2004
Intel's Fab 18, Israel, will be the first to produce the company's next-generation 90nm Flash technology in volume.
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Wednesday 8th September 2004
The European Commission wants to start negotiations at the end of September on a co-operation agreement with Ukraine on the development of a civil Global Navigation Satellite System (GNSS) based on the European Union-led GALILEO development. European Council of Ministers approval has been sought for the move.
Wednesday 8th September 2004
An Israeli Ministry of Health committee has investigated the death of an Israeli patient several days following his ingestion of a video camera capsule developed by Israeli company Given Imaging. The committee established that there was no connection between the capsule and the patient's death.
Friday 27th August 2004
A team of California Institute of Technology (Caltech) researchers reports a new method for coating single-walled carbon nanotubes (SWNTs) attached to atomic force microscope (AFM) tips with conformal fluorocarbon polymers formed in an inductively coupled plasma reactor (Nano Letters).
Friday 27th August 2004
Technical University of Clausthal physicists have made progress in characterising the atomic structure of silicon/silicon dioxide interfaces (Physical Review Letters, Volume 93, No.9, on-line August 27, 2004). Using a nonlinear optical method, Dr Stefan Bergfeld, Bjoern Braunschweig and Professor Winfried Daum studied the change in bond structure of interfacial atoms during the oxidation of a (111)-oriented silicon surface. The scientists also observed the changes in bonding states after thermal oxidation.
Friday 27th August 2004
Japanese researchers claim to have reduced the number of dislocations in silicon carbide crystals by two to three orders of magnitude (Nature, August 26, 2004).
Friday 27th August 2004
Technical University of Clausthal physicists have made progress in characterising the atomic structure of silicon/silicon dioxide interfaces (Physical Review Letters, Volume 93, No.9, on-line August 27, 2004).
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Friday 27th August 2004
Tokyo Electron (TEL) has agreed to make an equity investment in Molecular Imprints (MII) as a contributor to a Series B funding round.
Friday 27th August 2004
Eastman Kodak has made a definitive agreement to buy National Semiconductor's Imaging business.
Friday 27th August 2004
France's National Center for Scientific Research (CNRS) has ordered a GEN II molecular beam epitaxy (MBE) system from Veeco Instruments.
Friday 27th August 2004
The US Semiconductor Industry Association (SIA) is seeking proposals from interested investigators for the conduct of an independent retrospective epidemiological study of US semiconductor wafer fabrication workers.
Friday 27th August 2004
UK R&D company Innos and the University of Southampton have jointly patented a new technique that enables the suppression of boron diffusion in silicon-germanium (SiGe) using fluorine implantation.
Friday 27th August 2004
FlipChip International says that it has demonstrated a 95micron pitch bumping technology for advanced semiconductor devices at its R&D laboratory in Arizona.
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Friday 27th August 2004
A team of California Institute of Technology (Caltech) researchers reports a new method for coating single-walled carbon nanotubes (SWNTs) attached to atomic force microscope (AFM) tips with conformal fluorocarbon polymers formed in an inductively coupled plasma reactor (Nano Letters).
Friday 27th August 2004
SEMI produced its preliminary July 2004 book-to-bill ratio for North American semiconductor equipment producers.
Friday 27th August 2004
X-FAB Semiconductor Foundries, headquartered in Germany, reports all-time high quarterly sales at EUR36.0mn in Q2 2004.
Thursday 26th August 2004
Japanese researchers claim to have reduced the number of dislocations in silicon carbide crystals by two to three orders of magnitude (Nature, August 26, 2004). "These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems," the scientists write. Other applications for SiC are seen as high frequency and high temperature.
Wednesday 25th August 2004
The National Research Council of Canada's Industrial Materials Institute (NRC-IMI) joined the Nano Imprint Lithography (NIL) consortium that Austrian company EV Group (EVG) formed last year. The consortium is working to commercialise advanced NIL technologies.
Wednesday 25th August 2004
UK R&D company Innos and the University of Southampton have jointly patented a new technique that enables the suppression of boron diffusion in silicon-germanium (SiGe) using fluorine implantation. Research conducted at Innos' new facilities has shown that a properly optimised fluorine implant not only eliminates transient enhanced diffusion of boron, but also dramatically reduces normal boron thermal diffusion.

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