+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
 
Loading...
News Article

CEA-Leti develops 'cost-saving' CMOS-compatible 200mm process technology

News

CEA-Leti has developed a 200mm gallium nitride/silicon (GaN/Si) process technology compatible with CMOS cleanrooms that preserves the high performance of the semiconductor material and costs less than existing GaN/SiC technology.

In one of nine presentations at IEDM 2023, the institute said that current GaN high-electron-mobility-transistor (HEMT) technologies used in telecom or radar applications come on small GaN/SiC substrates and require processing in dedicated cleanrooms.

The high-performance SiC substrates used to grow GaN layers are very expensive and available only in relatively small size. This R&D project developed GaN/silicon technology (GaN/Si) on 200mm and later for 300mm wafer diameters in CMOS-compatible cleanrooms to reduce substrate cost and benefit from existing high-performance cleanroom facilities.

As a result, CEA-Leti’s GaN/Si technology performance at 28 GHz is gaining ground on GaN/SiC technology in terms of power density.

“Our goal was to reach existing state-of-the-art GaN HEMT performance at ~30 GHz with a 200mm CMOS- compatible GaN/Si technology and to compete with GaN/SiC technology,” said Erwan Morvan, CEA-Leti scientist and lead author of the paper, "6.6W/mm 200mm CMOS Compatible AlN/GaN/Si MIS-HEMT with In-Situ SiN Gate Dielectric and Low Temperature Ohmic Contacts”.

“This work demonstrates that CMOS-compatible 200mm SiN/AlN/GaN MIS-HEMT on silicon technology is a promising candidate for applications like 5G/6G infrastructure, satcom, radar for UAV detection or earth observation. It should enable less expensive devices while keeping high power density, high efficiency, light weight and compactness,” he said.

The devices developed in this work, which are designed for RF amplifiers and switches, can be used in those applications around 30 GHz.

While reliability testing on the process technology is just beginning, CEA-Leti’s ongoing R&D in this area will include increasing the raw output power and efficiency of its MIS-HEMT transistors, integrating its improved process modules to boost device performance & increase operation frequency toward 100+ GHz, and 3D integration of GaN/Si chips on 300mm Si wafers.

Tektronix and EA Elektro-Automatik offer expanded power portfolio
83% of supply chains can’t respond to disruptions in 24 hours
CMC Microsystems and ventureLAB sign MoU
Renesas introduces FemtoClock 3 timing solution
Mycronic receives order for SLX mask writer
Rapidus reveals US subsidiary and opens Silicon Valley office
Infineon introduces news MOTIX motor gate driver IC
Brewer Science unveils Smart Warehouse Monitor System
Symposium to showcase breakthroughs in microelectronics
CHIPS for America promotes over $50 million funding opportunity
SEMI University launches in-person courses
Samsung Electronics to establish Texan semiconductor ecosystem
Semiconductor chips drive innovation in AI and industries
Semiconductor equipment sales slip to $106.3 billion
Mouser Electronics receives 2023 Global Best Service Distributor of the Year Award from Diodes Incorporated
Quantum processor testing and measurement facilities up and running
Semiconductor Research Corporation announces 2024 call for research
Trend report unveils the future of circular electronics
PCIM Europe 2024: highlights and new records
PI contributes to technology node development
QP Technologies achieves ANSI/ESD S20.20 Certification
Renesas commences operations of Kofu Factory
TRI wins three Innovation Awards
Tektronix and recently acquired EA Elektro-Automatik offer expanded power portfolio
NEDO approves Rapidus’ FY2024 Plan and Budget
SK hynix signs Advanced Chip Packaging agreement
Renesas expands Quick Connect Studio
Infineon and Amkor deepen partnership
AP&S establishes site in the USA
Dracula Technologies selected by STMicroelectronics
RAIN RFID data to transform corporate sustainability initiatives
Integrated AMR replaces reed switches and hall effect sensors
×
Search the news archive

To close this popup you can press escape or click the close icon.
Logo
×
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • 1st January 1970
  • View all news 22645 more articles
Logo
×
Register - Step 1

You may choose to subscribe to the Silicon Semiconductor Magazine, the Silicon Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: