Samsung and Nova publish joint research
Demonstrating in-line capabilities of spectral interferometry and raman spectroscopy for advanced memory applications.
Nova published two co-authored papers with Samsung R&D Center research at the recent SPIE Advanced Lithography 2024. The papers were presented at the SPIE by Nova and Samsung, at the Metrology, Inspection and Process Control conference.
The papers are a result of the continuous collaboration between the companies that is driving numerous innovative joint development programs to enhance advanced chip manufacturing. The papers demonstrate multiple novel technologies Nova avails for advanced process control by developing unique solutions to measure critical parameters of interest on complex structures inside memory arrays.
The first paper "Unique Spectral Interferometry Solutions for Complex High Aspect Ratio 3D NAND Structures" demonstrates the capabilities of spectral interferometry (SI) with vertical traveling scatterometry algorithms (VTS) and AI capabilities to solve challenges in complex high-aspect-ratio structures, such as 3D NAND. This is achieved by measuring complex layer thicknesses of the multideck 3D structures directly from the VTS signals, without modeling, while filtering information from the underlayers. In addition, VTS and AI enable direct profiling of the deep through-type cell metal contacts in the areas with nonperiodic staircases and significant lateral variations.
The second paper, "On-Cell Thickness Monitoring of Chalcogenide Alloy Layer using Spectral Interferometry, Raman Spectroscopy, and Hybrid Machine Learning", introduces in addition to VTS modeling, the use of inline Raman Spectroscopy. The Raman signals corresponding to specific material bonds are converted to in-line on-cell thickness and composition measurement of critical chalcogenide material. It is demonstrated that Raman Spectroscopy results enable modeless AI solutions with VTS spectra, as a derivative of the solution's ability to measure material properties.
"We are excited about the opportunity to collaborate with Samsung R&D Center in introducing Nova's innovative technologies," said Dr. Shay Wolfling, Chief Technology Officer of Nova. "This collaboration enables us to evaluate, enhance and expand the use cases of our inline Spectral Interferometry and Raman technologies at critical process steps in the most advanced and challenging memory architectures. This joint work has demonstrated that through R&D collaboration with our customers, we can introduce groundbreaking solutions that will enable fast transition to high-volume manufacturing."
