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New Si2 Open Model Interface

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Provides standard for Advanced SPICE capabilities.

The Silicon Integration Initiative Compact Model Coalition has released a new version of the Open Model Interface, an Si2 standard, C-language application programming interface that supports SPICE compact model extensions.


OMI allows circuit designers to simulate and analyze such important physical effects as self-heating and aging, and perform extended design optimizations. It is based on TMI2, the TSMC Model Interface, which was donated to Si2 by TSMC in 2014. OMI supports 12 of CMC’s 15 SPICE models, including:


• BSIM-BULK (Berkeley Short-channel IGFET Model), a Bulk MOSFET model that provides excellent accuracy compared to measured data in all regions of operation.

• BSIM-CMG (Common Multi-Gate), a compact model for the class of common multi-gate FETs. All of today’s important Multi-Gate (MG) transistor behaviors are captured by this model.

• HiSIM2 (Hiroshima-university STARC IGFET Model), one of the early adopters of the surface potential model compared to the traditional Vt extraction-based models.

• BSIM-SOI (Silicon-On-Insulator), a formulation on top of the BSIM framework which accurately captures the complex physics in silicon-on-insulator devices used in logic and RF applications.

• ASM-HEMT (Gallium-Nitride), a formulation which accurately captures the complex physics in multi-field plate power devices used in efficient supply and RF applications.

• MVSG-HEMT (Gallium-Nitride), a formulation which accurately captures the complex physics in multi-field plate power devices used in efficient supply and RF applications.

• HICUM-L2 (Silicon Bipolar), a model formulation that accurately captures the complex physics in high-frequency RF applications for ever-increasing accurate speed simulations.


This is the first release of OMI to also support non-MOSFET devices, which positions OMI to support the heterogeneously integrated technologies we see on the horizon of semiconductor design.


Additional models will continue to be added by the CMC OMI Working Group.

CMC members include semiconductor manufacturers, circuit designers, and simulation tool providers. They pool resources to fund and develop SPICE standard compact models and standard interfaces to promote IC design interoperability. As a publicly available Si2 standard API, OMI can be downloaded at no charge. CMC members have unique access to QA test suite to certify OMI implementation in their software tools

.

The public version of OMI, which includes documentation, the API description, and example code is available at https://si2.org/cmc


OMI allows for modeling of device degradation over time, which is referred to as aging, and provides for statistical modeling of process variations. OMI adds to the SPICE flexibility for the most advanced designs by encapsulating the modeling-layout-dependent effects of complex structures. New features on top of the SPICE models can be added, such as safe operating area checks, etc., that can be foundry proprietary protected or open for general user exploration.


Colin Shaw, senior corporate applications engineer at Silvaco and chair of the OMI Working Group, stated, “The effort to create an industry standard involved the contributor, TSMC, along with over 40 individuals from CMC member companies. This new release of OMI expands the device model capability to support a host of more key models, and reliability effects with complex sweeps so is poised to streamline the designer’s optimization capability, as this ability to modify device parameters is standardized by foundries and simulation tool providers.”


Dr. Peter Lee, director at Micron Memory Japan and CMC chair, said, “As OMI is adopted by foundries and integrated device manufacturers, its benefits and cost-effectiveness will grow. CMC members include leading developers who have committed to aligning their working group efforts with OMI. Through these efforts to increase industry standardization, members have a clear, competitive advantage with access to code and additional resources.”

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